Letters Archives - IEEE Transactions on Power Electronics

An Improved di/dt-RCD Detection for Short-Circuit Protection of SiC mosfet

June 5, 2020J. Xue, Z. Xin, H. Wang, P.C. Loh, and F. BlaabjergLetters

An Improved di/dt-RCD Detection for Short-Circuit Protection of SiC mosfet Silicon carbide metal-oxide-semiconductor field-effect transistor has a smaller short-circuit tolerance, and hence, requires faster and more accurate short-circuit protection. One prospective method is to combine fast di/dt detection with an integration circuit. The former is for detecting the extremely fast increase of short-circuit current, while […]

Gate-Drive Power Supply With Decayed Negative Voltage to Solve Crosstalk Problem of GaN Synchronous Buck Converter

Gallium-Nitride (GaN) transistor suits for high switching frequency condition to build high power density converters. However, it suffers from crosstalk problem especially in bridge-structure applications, that is, the fast voltage changing of the switching node causes a positive or negative voltage spike on the gate-source voltage of GaN transistor, which results in false turn-on and […]