Discrete and Integrated Semiconductors Archives - IEEE Transactions on Power Electronics

Characterization of 3.3-kV Reverse-Blocking SiC Modules for Use in Current-Source Zero-Voltage-Switching Converters

June 4, 2020X. Han, L. Zheng, R.P. Kandula, K. Kandasamy, D. Divan, and M. SaeedifardDiscrete and Integrated Semiconductors

Characterization of 3.3-kV Reverse-Blocking SiC Modules for Use in Current-Source Zero-Voltage-Switching Converters Silicon carbide (SiC) MOSFETs with ratings of 3.3 to 15 kV represent a dramatic improvement over available silicon devices, enabling the realization of medium-voltage converters in demanding applications such as solid-state transformers. Typical voltage-source converter configurations realize significant reduction in switching loss with […]

Analytical Model to Study Hard Turn-off Switching Dynamics of SiC mosfet and Schottky Diode Pair

Analytical Model to Study Hard Turn-off Switching Dynamics of SiC mosfet and Schottky Diode Pair Fast switching transient of SiC mosfet may lead to prolonged oscillations, spurious turn on, large device stress, and high amount of electromagnetic interference generation. For an optimal layout and gate driver design, study of switching dynamics is important. This article […]